IRFD9020PBF datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  IRFD9020PBF
• Производитель
  Vishay Intertechnology
• Описание
  Vishay Semiconductors IRFD9020PBF Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 1.6 A Resistance Drain-Source RDS (on): 0.28 Ohm at 10 V Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: HexPDIP Fall Time: 29 ns Forward Transconductance gFS (Max / Min): 1.3 S Gate Charge Qg: 19 nC Minimum Operating Temperature: - 55 C Power Dissipation: 1300 mW Rise Time: 68 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 15 ns
• Количество страниц
  1 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  5,03 KB

IRFD9020PBF datasheet скачать

IRFD9020PBF datasheet